PhD offer -Ferroelectric memcapacitor functionality in a cryogenic environment

id="offer-description" class="ecl-u-type-heading-2 ecl-u-mt-none ecl-u-mb-l">Offer Description Context: Recent advances in quantum computing have demonstrated the potential of several hardware platforms, ranging from superconducting circuits to spin‑based qubits implemented in silicon or germanium quantum dots. The latter approach is particularly attractive because it builds directly on mature CMOS technologies, offering a realistic pathway toward cost‑effective, compact, and industrially scalable quantum processors. However, the large‑scale integration of semiconductor qubits is currently limited by the complexity of cryogenic control. The high number of control lines, power dissipation, and manual tuning procedures represent major bottlenecks for the deployment of thousands of qubits on a single chip. Overcoming these limitations requires integrating adaptive control and tuning functionalities directly in the cryogenic environment, while preserving CMOS compatibility and ultra‑low power consumption. In this context, HfZrO₂ (HZO)‑based ferroelectric memcapacitors emerge as a highly promising technology. Their non‑volatility, analog tunability, and compatibility with advanced industrial processes make them strong candidates for fully integrated, compact, and scalable cryogenic control electronics. Nevertheless, their operation, performance, and reliability in the deep‑cryogenic regime relevant to quantum computing remain to be experimentally demonstrated. Research project: Th