Postdoctoral position on the modeling of Si/SiGe and Ge/GeSi spin qubits

id="offer-description" class="ecl-u-type-heading-2 ecl-u-mt-none ecl-u-mb-l">Offer Description A two-year post-doctoral position is open at the Interdisciplinary Research Institute of Grenoble (IRIG) of the CEA Grenoble (France) on the theory and modeling of silicon/germanium electron and hole spin qubits. The selected candidate is expected to start no later than April 1st, 2027. Silicon/Germanium spin qubits have attracted increasing attention and have made outstanding progress in the past few years. In these devices, the elementary information is stored as a coherent superposition of the spin states of an electron in a Si/SiGe heterostructure, or of a hole in a Ge/SiGe heterostructure. These spins can be manipulated electrically owing to the intrinsic (or to a synthetic) spin-orbit coupling, and get entangled through exchange interactions, allowing for the implementation of a variety of one- and two-qubit gates required for quantum computing and simulation. Si/Ge heterostructures hold various records in semiconductor spin qubit technologies [1, 2], as they provide very clean epitaxial interfaces, and can be made free of nuclear spins that would interfere with the electron or hole spins. It is essential to support the development of these advanced quantum technologies with state-of-the-art theory and modeling. For that purpose, CEA/IRIG is actively developing the “TB_Sim” code. TB_Sim is able to describe very realistic qubit structures down to the atomic scale if needed usin