POST-DOC: Ferroelectric control of superconducting 2-dimensional electron gases (M/F)

id="offer-description" class="ecl-u-type-heading-2 ecl-u-mt-none ecl-u-mb-l">Offer Description Develop field-effect transistors combining a KTaO3-based two-dimensional electron gas (2DEG) with a HfZrO2 (HZO) ferroelectric gate. The project aims to achieve nonvolatile control of the electronic properties of the 2DEG through ferroelectric polarization while preserving the quality of the conducting interface. The successful candidate will investigate the relationship between polarization, carrier density and mobility, then explore control of the superconducting state in heterostructures that remain superconducting after gate integration. • Grow HZO thin films by atomic layer deposition (ALD) and/or pulsed laser deposition (PLD). Optimize deposition conditions, annealing and electrode materials to obtain switchable polarization while preserving the 2DEG. • Characterize heterostructure structure, morphology and composition using X-ray diffraction, atomic force microscopy and X-ray photoelectron spectroscopy. • Fabricate capacitors and transistors in the cleanroom using optical and/or electron-beam lithography, electrode deposition and etching. • Measure ferroelectric properties using polarization loops, positive-up-negative-down (PUND) protocols and piezoresponse force microscopy. Assess retention and endurance and distinguish ferroelectric switching from charge trapping or ionic migration. • Perform resistance and Hall measurements before and after gate integration, then followin